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| Datasheet File OCR Text: |
| PROCESS General Purpose Rectifier 8 Amp Glass Passivated Rectifier Chip CPD07 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 98 x 98 MILS 10.4 MILS 82.5 x 82.5 MILS Au - 5,000A Au - 2,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 1,170 PRINCIPAL DEVICE TYPES CR6A2GPP Series BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (16-September 2003) Central TM PROCESS CPD07 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (16-September 2003) |
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